| PART |
Description |
Maker |
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| CY7C1362C-166AJXC CY7C1360C-166AJXC CY7C1360C-166A |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM
|
Cypress Semiconductor
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| CY7C1355C-100BGC CY7C1357C-133AXC CY7C1355C-133AXC |
9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| IDT7202LA IDT7202LA120D IDT7202LA120DB IDT7202LA12 |
CMOS ASYNCHRONOUS FIFO 256 x 9 512 x 9 1K x 9
60A, 400V UItrafast Rectifier; Package: TO-247; No of Pins: 2; Container: Rail
CMOS ASYNCHRONOUS FIFO 256 x 9 / 512 x 9 / 1K x 9
CMOS ASYNCHRONOUS FIFO 256 x 9/ 512 x 9/ 1K x 9
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Ultrafast IGBT
RES 205K-OHM 1% 0.063W 100PPM THK-FILM SMD-0402 TR-7-PA2MM
400V N-Channel Logic Level IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
30A/200V Ultra Fast Recovery Rectifier Co-Pak; Package: TO-3P; No of Pins: 3; Container: Rail
6A/1500V Damper and 20A/600V Modulation Diode; Package: TO-220F; No of Pins: 3; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: SOIC; No of Pins: 14; Container: Tape & Reel
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
S-Interface 16 Pin DIP (BSEN60950), RoHS compatible CMOS异步FIFO56 × 912 × 9，每1000 × 9
Single, High Speed, 2.5V to 12V, Rail to Rail Amplifier CMOS异步FIFO56 × 912 × 9，每1000 × 9
1200V NPT-Trench IGBT; Package: TT3P0; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 15 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 80 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDSO28
1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 35 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 30 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CQCC32
1200V NPT-Trench IGBT CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 25 ns, CDIP28
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 50 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 40 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 65 ns, PQCC32
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 7C420-65 7C433-65 7C425-20 7C425-65 7C425-40 7C425 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 256/512/1K/2K/4K × 9异步FIFO
256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 65 ns, PQCC32
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
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